1 trench gate design dual igbtmod? 150 amperes/600 volts CM150DUS-12F powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 outline drawing and circuit diagram q (2 places) cm a b s t t u u w v d r k k c2e1 e2 c1 #110 tab x h thick (4 places) x y m n e f g f j e2 g2 g1 e1 p - nuts x z deep (3 places) t c measured point c l c2e1 rtc rtc e2 e1 g1 c1 e2 g2 1 description: powerex igbtmod? modules are designed for use in high frequency applications; 30 khz for hard switching applications and 60 to 70 khz for soft switching applications. each module consists of two igbt transistors in a half-bridge con?guration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simpli?ed system assem - bly and thermal management. features: low v ce(sat) low e sw(off) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: power supplies induction heating welders ordering information: example: select the complete module number you desire from the table - i.e. CM150DUS-12F is a 600v (v ces ), 150 ampere dual igbtmod? power module. current rating v ces type amperes volts (x 50) cm 150 12 dimensions inches millimeters a 3.70 94.0 b 1.89 48.0 c 1.18 +0.04/-0.02 30.0 +1.0/-0.5 d 3.150.01 80.00.25 e 0.43 11.0 f 0.16 4.0 g 0.71 18.0 h 0.02 0.5 j 0.53 13.5 k 0.91 23.0 l 0.83 21.2 m 0.67 17.0 dimensions inches millimeters n 0.28 7.0 p m5 m5 q 0.26 dia. 6.5 dia. r 0.02 4.0 s 0.30 7.5 t 0.63 16.0 u 0.10 2.5 v 1.0 25.0 w 0.94 24.0 x 0.51 13.0 y 0.47 12.0 z 0.47 12.0
2 CM150DUS-12F trench gate design dual igbtmod? 150 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 2 absolute maximum ratings, o l ml ,m junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25c) i c 150 amperes peak collector current i cm 300* amperes emitter current** (t c = 25c) i e 150 amperes peak emitter current** i em 300* amperes maximum collector dissipation (t c = 25c, t j 150c) p c 520 watts mounting torque, m5 main terminal C 31 in-lb mounting torque, m6 mounting C 40 in-lb weight C 310 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, o ml o o collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 20 a gate-emitter threshold voltage v ge(th) i c = 15ma, v ce = 10v 5 6 7 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v, t j = 25c 1.7 2.0 2.7 volts i c = 150a, v ge = 15v, t j = 125c C 1.95 C volts total gate charge q g v cc = 300v, i c = 150a, v ge = 15v C 930 C nc emitter-collector voltage** v ec i e = 150a, v ge = 0v C C 2.6 volts **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). dynamic electrical characteristics, o ml o o input capacitance c ies C C 41 nf output capacitance c oes v ce = 10v, v ge = 0v C C 2.7 nf reverse transfer capacitance c res C C 1.5 nf resistive turn-on delay time t d(on) v cc = 300v, i c = 150a, C C 120 ns load rise time t r v ge1 = v ge2 = 15v, C C 100 ns switch turn-off delay time t d(off) r g = 4.2 , inductive C C 350 ns times fall time t f load switching operation C C 150 ns diode reverse recovery time** t rr i e = 150a C C 150 ns diode reverse recovery charge** q rr C 2.8 C c **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
3 CM150DUS-12F trench gate design dual igbtmod? 150 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 thermal and mechanical characteristics, o ml o o thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, t c reference C 0.24 c/w point per outline drawing thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference C C 0.47 c/w point per outline drawing thermal resistance, junction to case r th(j-c') q per igbt 1/2 module, C C 0.19** c/w t c reference point under chip contact thermal resistance r th(c-f) per module, thermal grease applied C 0.07 C c/w external gate resistance r g 4.2 C 42 ** if you use this value, r th(f-a) should be measured just under the chips. collector-current, i c , (amperes) switching loss, e sw , (mj/pulse) switching loss vs. collector current (typical) 10 1 10 2 10 3 10 0 10 -1 10 1 e sw(on) e sw(off) collector-emitter voltage, v ce , (volts ) collector current, i c , (amperes) output characteristics (typical) 0 1 2 3 4 150 50 0 v ge = 20v 13 8 8.5 7.5 7 100 250 200 30 0 9 15 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 3.0 0 5 0 100 150 200 250 2.5 2.0 1.5 1.0 0.5 0 300 v ge = 15v t j = 25 c t j = 125 c collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 2 10 2 10 1 10 -1 10 0 v ge = 0v f = 1mhz c oes c re s c ie s 10 0 10 1 0.5 0 1.5 1.0 2.0 2.5 3.0 10 0 10 1 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 emitter current, i e , (amperes) t j = 25 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat ) , (volts) collector-emitter saturation voltage characteristics (typical) 5 6 8 10 14 12 18 16 20 4 3 2 1 0 t j = 25 c i c = 60a i c = 300a i c = 150a v cc = 300v v ge = 15v r g = 4.2 ? t j = 125 c half-bridge switching t j = 25 o c 9.5 10 11
4 CM150DUS-12F trench gate design dual igbtmod? 150 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 time, (s ) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics ( igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c ) = 0.24c/w z th = r th ? (normalized value) 10 -1 10 -2 10 -3 time, (s ) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c ) = 0.47c/w z th = r th ? (normalized value) 10 -1 10 -2 10 -3 t rr i rr collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 10 0 t d(off ) t d(on ) t r v cc = 300v v ge = 15v r g = 4.2 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) 10 3 emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 2 10 1 10 2 10 3 10 1 10 0 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 1400 1000 1200 600 800 16 12 8 4 0 200 400 v cc = 300v v cc = 200v i c = 150 a v cc = 300v v ge = 15v r g = 4.2 w t j = 125 c t rr i rr gate resistance, r g , () reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 0 10 1 10 0 10 -1 10 2 reverse recovery switching loss vs . gate resistance (typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 10 3 reverse recovery switching loss vs. emitter current (typical) v cc = 300v v ge = 15v i c = 150 a t j = 125c inductive load c snubber at bus v cc = 300v v ge = 15v r g = 4.3 w t j = 125c inductive load c snubber at bus
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